The Schottky diode, unlike the PN-junction diode is not made of a n-type and n-type semiconductor junction. Instead, is consists of a highly conductive silicide material or metal compound with an n-type semiconductor silicon material. Different metal compounds will allow for varying forward voltage drops, generally between 0.3 and 0.5 volts.
IV curves are often referred to when understanding the function of a diode. One difference that can be inferred from the IV curve comparison is that the Schottky forward current can be much larger, making it useful in applications with higher levels of current.