A photodetector simply is a device that converts light energy to an electrical current. These devices are very much similar to lasers, although they are designed to operate in reverse bias. “Dark current” is a term that originates from this reverse bias condition. When you reverse bias any diode, there is some leakage current which is appropriately named reverse bias leakage current. For photsensitive devices, it is called dark current because there is no light absorption involved. The main cause of this current is random generation of electrons and holes in the depletion region. Ideally, this dark current is minimal (<< 1).
The basic structure of the photodiode is the “PIN” structure, similar to a semiconductor laser diode. An intrinsic (undoped) region occurs between the P-doped and N-doped region. Although PIN diodes are poor rectifiers, they are much better suited for high speed, high frequency applications due to the high level injection process. The wide intrinsic region provides a lowered capacitance at high frequencies. For photodetectors, the process is photon energy being absorbed into the depletion region, causing an electron hole pair to be created when the electron moves to a higher energy level (from valence to conduction band). This is what causes an electrical current to be created from light.
Photodetectors are “photoconductive”. That is, conductivity changes with applied light. Like amplifiers and other devices, photodetectors have “Figures of Merit” which signify characteristics of the device. These will be briefly examined
Quantum efficiency refers to the number of carriers generated per photon. It is normally denoted by η. It can also be stated as carrier flux/incident photon flux. Sometimes anti-reflection coatings are applied to photodetectors to increase QE.
Responsivity is closely related to the QE (quantum efficiency). The units are amperes/watt. It can also be known as “input-out gain” of any photosensitive or detective device. For amplifiers this is known as “gain”. Responsivity can be increased by maximizing the quantum efficiency.
This is the time required for the photodiode to increase its output from 10% to 90% of final output level.
Noise Equivalent power
This value corresponds to units of Watts/sqrt(Hz). It is another measure of sensitivity of the device in terms of power that gives a signal to noise ratio of one hertz per output bandwidth, Small NEP is due to increased sensitivity of the device.