AlGaAs/GaAs Strip Laser

This project features a heterostructure semiconductor strip laser, comprised of a GaAs layer sandwiched between p-doped and n-doped AlGaAs. The model parameters are outlined below. The structure is presented, followed by output optical power as a function of injection current. Thereafter, contour plots are made of the laser to depict the electron and hole densities, recombination rate, light intensity and the conduction and valence band energies.

 

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