Semiconductor Growth Technology: Molecular Beam Epitaxy and MOCVD

The development of advanced semiconductor technologies presents one important challenge: fabrication. Two methods of fabrication that are being used to in bandgap engineering are Molecular Beam Epitaxy (MBE) and Metal organic chemical vapour deposition (MOCVD).

Molecular Beam Epitaxy uses high-intensity vacuums to fabricate compound semiconductor materials and compounds. Atoms or molecules containing the desired atoms are directed to a heated substrate. Molecular Beam Epitaxy is highly sensitive. The vacuums used make use of diffusion pumps or cryo-pumps; diffusion pumps for gas source MBE and cryo-pumps for solid source MBE. Effusion cells are found in MBE and allow the flow of molecules through small holes without collusion. The RHEED source in MBE stands for Reflection Hish Energy Electron Diffraction and allows for information regarding the epitaxial growth structure such as surface smoothness and growth rate to be registered by reflecting high energy electrons. The growth chamber, heated to 200 degrees Celsius, while the substrate temperatures are kept in the range of 400-700 degrees Celsius.

MBE is not suitable for large scale production due to the slow growth rate and higher cost of production. However, it is highly accurate, making it highly desired for research and highly complex structures.



MOCVD is a more popular method for growing layers to a semiconductor wafer. MOCVD is primarily chemical, where elements are deposited as complex chemical compounds containing the desired chemical elements and the remains are evaporated. The MOCVD does not use a high-intensity vacuum. This process (MOCVD) can be used for a large number of optoelectronic devices with specific properties, including quantum wells. High quality semiconductor layers in the micrometer level are developed using this process. MOCVD produces a number of toxic elements including AsH3 and PH3.

MOCVD is recommended for simpler devices and for mass production.



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