Quantum Well: InP-InGaAsP-InP

Quantum wells are widely used in optoelectronic and photonic components and for a variety of purposes. Two materials that are often used together are InP and InGaAsP. Two different models will be presented here with simulations of these structures. The first is an InP pn-junction with a 10 nm InGaAsP (unintentionally doped) layer between. The second is an InP pn-junction with 10 nm InGaAsP quantum wells positioned in both the positive and negative doped regions.

Quantum Well between pn-junction

quantum well

The conduction band and valence band energies are depicted below for the biased case:

quantum well2

The conduction current vector lines:

qwell1

ATLAS program:

go atlas
Title Quantum Wells
# Define the mesh
mesh auto
x.m l = -2 Spac=0.1
x.m l = -1 Spac=0.05
x.m l = 1 Spac=0.05
x.m l = 2 Spac =0.1
#TOP TO BOTTOM – Structure Specification
region num=1 bottom thick = 0.5 material = InP NY = 10 acceptor = 1e18
region num=3 bottom thick = 0.01 material = InGaAsP NY = 10 x.comp=0.1393  y.comp = 0.3048
region num=2 bottom thick = 0.5 material = InP NY = 10 donor = 1e18
# Electrode specification
elec       num=1  name=anode  x.min=-1.0 x.max=1.0 top
elec       num=2  name=cathode   x.min=-1.0 x.max=1.0 bottom

#Gate Metal Work Function
contact num=2 work=4.77
models region=1 print conmob fldmob srh optr
models region=2 srh optr
material region=2

#SOLVE AND PLOT
solve    init outf=diode_mb1.str master
output con.band val.band e.mobility h.mobility band.param photogen opt.intens recomb u.srh u.aug u.rad flowlines
tonyplot diode_mb1.str
method newton autonr trap  maxtrap=6 climit=1e-6
solve vanode = 2 name=anode
save outfile=diode_mb2.str
tonyplot diode_mb2.str
quit
Quantum Well layers inside both p and n doped regions of the pn-junction
Structure:
qwell3
Simulation results:
qwell2
#TOP TO BOTTOM – Structure Specification
region num=1 bottom thick = 0.25 material = InP NY = 10 acceptor = 1e18
region num=3 bottom thick = 0.01 material = InGaAsP NY = 10 x.comp=0.1393  y.comp = 0.3048
region num=4 bottom thick = 0.25 material = InP NY = 10 acceptor = 1e18
region num=2 bottom thick = 0.25 material = InP NY = 10 donor = 1e18
region num=6 bottom thick = 0.01 material = InGaAsP NY = 10 x.comp=0.1393  y.comp = 0.3048
region num=2 bottom thick = 0.25 material = InP NY = 10 donor = 1e18

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